패턴 웨이퍼

Description

• Line & Space / Contact Hole Pattern
• I-Line, KrF, ArF, ArF Immersion
• CMP Test (Cu, W, STI, ILD, etc) Paatern
  • MIT (854, 754, 484, 464, 454) 외 각종 MASK 보유
• Plasma Damage TEG
• ※ min. L/S 32nm, 신규 MASK 제작 가능.

• 

  01 Cu CMP Test Pattern Wafer

  • Dia. : 300mm
  • Structure : Si Sub / TEOS 3kA / Etch(100nm Trench) / TaN 250A / Cu Seed 1kA / EP Cu 7kA Fill + Annealing
• 

  02 W CMP Test Pattern Wafer

  • Dia. : 300mm
  • Structure : Si Sub / TEOS 2kA / Etch (3kA~8kA, 130nm Via) / TiN 150A / Ti 150A / W 3kA 8kA Fill
• 

  03 STI CMP Test Pattern Wafer

  • Dia. : 300mm
  • Structure : Si Sub / PAD Ox 100A / SiN 2kA / Si Etch 3.5kA (130nm Trench) / HDP 6kA Fill
• 

  04 TSV (Through Si Via) Pattern Wafer

  • Dia. : 300mm
  • Structure : Si Sub / Si Via Etch 50um / TEOS 6kA / TaN 600A / Cu Seed 2um / EP Cu 60um Fill
• 

  05 Deep Si Etch(50um) Pattern Wafer

  • Dia. : 300mm
  • Structure : Si Sub / Si Via Etch 50um
• 

  06 Double Patterning Wafer

  • Dia. : 300mm
  • Structure : Si Sub / 20A Sac Ox / Poly Si 300A +/-5% / Etch (30nm Trench)

※ 300mm 외 200mm Pattern Wafer 제작 가능
※ 상기 제품 예시 외에도 다양한 Pattern Wafer 제작이 가능합니다.